Abstract
Organic thin-film transistors were fabricated directly on the surface of commercially available cleanroom paper using the vacuum-deposited small-molecule semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT). A thin, high-capacitance gate dielectric that allows the TFTs to be operated with low voltages of 2V was employed. The TFTs have a charge-carrier mobility of 1.6cm2/Vs, an on/off current ratio of 106, and a subthreshold slope of 90mV/decade. In addition, the TFTs also display a very large differential output resistance, which is an important requirement for applications in analog circuits and active-matrix displays.
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