Abstract
Organic field effect transistors with a nanocomposite gate of ZrO2 and poly(α-methyl styrene) (see figure, left) show performances close to the theoretically possible limit, with interface trap densities comparing favorably with the current state of the art in silicon microelectronics. They are not only key elements in flexible electronics, but also in low-cost, high-end sensors, as demonstrated with optothermal sensing elements (see figure, right).
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