Low voltage organic field effect transistors with a poly(hexylthiophene)–ZnO nanoparticles composite as channel material

Abstract

AbstractWe report on solution processable organic field effect transistors prepared using a poly(3‐hexylthiophene)–ZnO nanoparticles composite as channel semiconductor material and cross‐linked polyvinyl alcohol as gate insulator. Our transistors show a field effect mobility of 0.35 ± 0.06 cm2/V s, threshold voltage of –1.30 ± 0.11 V, and Ion/Ioff ratio of (1.0 ± 0.1) × 103. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)