Low voltage operated, sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

Abstract

Low power-driven oxide thin film transistor (TFT) with a high-k gate dielectric is fabricated by a simple solution process. Sol–gel derived Gd2O3 film exhibits the dielectric constant in the range of 9–14 with breakdown field as high as 3.5 MV cm−1. Zn–In–Sn–O based TFTs combined with a corresponding film demonstrate the readiness of solution processed high-k film as gate insulators. The resultant device exhibits the enhanced performance with the field-effect mobility of ∼1.9 cm2 V−1 s−1, which is improved by a factor of 4.5 comparing with the conventional TFT based on a SiO2 insulator, and the exceptionally low operating voltage of 6 V.