Abstract
A low-voltage multilevel organic thin-film memory device is proposed and demonstrated for nonvolatile data storage. Charge carrier density in the storage field was tuned up to four discrete levels in pentacene organic thin-film transistor with poly(methyl methacrylate)-modified Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film as the dielectric layer through light-assisted program procedures. Charges can be stored over 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s at room temperature. The states can be clearly distinguished after 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> write-read cycles.
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