Low Voltage Memory Test Algorithm and Fault Injection Technology

Abstract

This paper proposes a half-selection stability fault, which belongs to a type of dynamic fault that cannot be covered by traditional March algorithms. As the voltage decrease, the impact of the fault gradually increases and eventually causes the memory to fail. In order to solve the problem, March_HS algorithm is proposed. The new algorithm not only can effectively test half-selection stability faults, but also has a high fault coverage. An improved random fault injection method is proposed to verify the fault coverage of the March_HS. This method can simulate the faults of SRAM more realistically during the actual chip manufacturing process. The algorithm and random fault injection are verified on a low power MCU, based on TSMC 28nm. The experimental results show that random fault injection realizes location, resistance and number of injected faults are all random. At 0.8V, the fault coverage of March_HS can be improved by 25.7%.