Abstract
High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low-voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties, including a current ON/OFF ratio > 106 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins >92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
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