Abstract
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the voltage–current curve is achievable with a low driven bias for the present device. The response current exhibits a linear dependence on the intensity of gated light, and the measured maximum photosensitivity is approximately 0.1 A/W. The dynamic responses for various light frequencies and their dependences on the load resistances are investigated as well. The cut-off frequency of ∼50 Hz is abstracted, indicating the potential application for economical and efficient light switch or optical communication unit. The DC photo-gated response is explained by the energy level diagram, and is numerically simulated by an equivalent circuit model, suggesting a clear correlation between photovoltaic and photoconductive behaviors as well as their optical responses.
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