Low Voltage Driven CMOS Circuits Based on Silicon on Glass

Abstract

Low voltage driven inverter, ring oscillator and shift resistor using n- and p- channel TFTs based on Corning® silicon-on-glass substrates (SiOG) is studied. The field effect mobility of n- and p-channel TFTs based on SiOG are 226 cm2/V s and 165 cm2/V, respectively. TFTs exhibit the symmetric threshold voltage of ± 1.1 V and gate voltage swing of 0.21 ~ 0.23 V/dec. The total propagation delay time of the CMOS inverter is 2.54ns at the supply voltage of 7 V. In addition, the rise and fall times of the shift register are found to be 0.5 µs and 0.7 µs at VDD of 7 V, respectively. Therefore, high performance integrated circuits can be possible on SiOG using CMOS technologies.