Abstract
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a “channel array” approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V−1 s−1 (up to 26 cm2 V−1 s−1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.
Highlights
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging
Electronics has witnessed impressive technological achievements, owing to the development of new processes and materials with extraordinary electrical and mechanical properties, which have enabled the development of Internet of Things applications, ranging from wearable electronics to mobile healthcare
Two-dimensional materials (2DMs) combine good tunable electronic properties with high mechanical flexibility, making them extremely promising as building blocks for flexible electronics[9,10]. They can be produced in solution with mass scalable and low-cost techniques, such as liquid-phase exfoliation[11], enabling their deposition by simple fabrication techniques such as inkjet printing12–17. 2D semiconducting materials, such as transition metal dichalcogenides (TMDCs)[18,19], with extended bandgap tunability through composition, thickness, and possibly even strain control, represent promising materials as channels for field-effect transistors (FETs), which are fundamental components in electronics
Summary
Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Electronics has witnessed impressive technological achievements, owing to the development of new processes and materials with extraordinary electrical and mechanical properties, which have enabled the development of Internet of Things applications, ranging from wearable electronics to mobile healthcare This has led to a continuous and marked increase in demand of light-weight, flexible, and low-cost devices, posing strong constrains on traditional fabrication methods[1,2]. Two-dimensional materials (2DMs) combine good tunable electronic properties with high mechanical flexibility, making them extremely promising as building blocks for flexible electronics[9,10] They can be produced in solution with mass scalable and low-cost techniques, such as liquid-phase exfoliation[11], enabling their deposition by simple fabrication techniques such as inkjet printing. Lin et al 27 reported FETs made with solution-processed MoS2, showing remarkable performance (average mobility of ~7–11 cm[2] V−1 s−1), but device fabrication required acid cleaning and annealing above
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