Abstract
The lowest threshold current of the external-cavity semiconductor laser with fiber Bragg grating using genetic algorithms is investigated. Effects of the external cavity length, coupling efficiency and anti-reflection coating reflectivity on static characteristics, such as L-I curves and side mode suppression ratios (SMSR) are investigated by using multi-mode rate equation. It is found that the reflectivity of the anti-reflection coating for low-threshold performance needs to be increased at the cost of the stability of the fiber grating external-cavity semiconductor laser. The optimal external cavity length obtained by genetic algorithms can be used to obtain the lowest threshold current for sacrificing a little SMSR. However, with the decrease of AR-coating reflectivity, output powers and SMSRs are slightly dependent on the external cavity length.
Published Version
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