Abstract
A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum well laser. Lateral and vertical npn current blocking layers were formed for the first time by a selfaligned process. Devices showed threshold current of 10 mA and total slope efficiency of 0.56 under room temperature CW operation.
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