Abstract
A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum well laser. Lateral and vertical npn current blocking layers were formed for the first time by a selfaligned process. Devices showed threshold current of 10 mA and total slope efficiency of 0.56 under room temperature CW operation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
