Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers

Abstract

CW operation of InGaAs/InP DH lasers grown by molecular beam epitaxy has been achieved at a heat sink temperature of 6°C at a wavelength of 1.70 µm. This result was achieved by growing DH wafers by using Mn as a p-type dopant source and annealing them at 700°C for one hour. Mn-doping enabled formation of p-type InP epilayers with room temperature hole concentrations as high as 1×1018 cm-3.