Abstract
P-type doping is used to demonstrate high-To, low-threshold 1-3 μm InAs quantum-dot lasers. A 5-μm-wide oxide confined stripe laser with a 700-μm-long cavity exhibits a pulsed T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power over 15 mW. The threshold at 100/spl deg/C is 8.4 mA with an output power over 8 mW.
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