Abstract
A 1.3-μm wavelength, InGaAsP-InP folded-cavity, surface-emitting laser with CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> -H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> reactive ion-etched vertical and 45/spl deg/ angled facets was demonstrated for the first time. Continuous-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light. These surface-emitting lasers with two dry-etched facets are suitable for wafer-level testing and for monolithic integration with other InP-based photonic devices.
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