Abstract
Summary form only given. The author reviews recent achievements on InP-based photonic devices and integrated circuits. These include: strained InAsP/InP quantum wire DFB lasers prepared by mass transport; wavelength trimming for multiple wavelength InGaAsP/InP MQW DFB laser arrays; wavelength conversion and optical memory based on DFB semiconductor optical amplifiers (SOAs); polarization-insensitive and chirping-controlled EA modulators by potential tailored InGaAs/InAlAs/InP quantum wells; InGaAsP/InP directionally-coupled semiconductor optical amplifiers for digital wavelength conversion and processing; InP optical gate switches by monolithic integration of multimode interference couplers and SOA arrays; and a new selective-area epitaxy mode in the metal-organic vapor phase epitaxy (MOVPE) for active/passive integration.
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