Abstract

A low threshold current of 1.8 mA and large slope efficiency of 0.30 mW/mA were obtained using 1.5 mu m GRINSCH strained MQW laser diodes. High-temperature operation was confirmed, and the threshold current at 80 degrees C was 5.0 mA with a slope efficiency of 0.18 mW/mA. The device had a short carrier lifetime of less than 1.55 ns.

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