Abstract
AlGaAs/GaAs-distributed feedback (DFB) lasers with oxide-stripe structure were fabricated by a two-step molecular beam epitaxial (MBE) growth for the first time. The large coupling coefficient of 90 cm-1and the threshold current as low as 165 mA at room temperature were obtained with the second-order gratings. The characteristic temperature T 0 was as high as 210 K. Single longitudinal-mode oscillation was observed up to I/I_{th} = 1.5 and from 0 to 50°C without any mode hopping. The wavelength variation from device to device was ±5 A. The dependence of the coupling coefficient on the device structure was calculated, and it was shown that MBE is much more advantageous than LPE to enhance the coupling coefficient.
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