Abstract
We report the first low threshold, buried heterostructure (BH) vertical cavity surface emitting laser (VCSEL) using organometallic chemical vapor deposition regrowth. Very low threshold current of 0.8 mA and threshold current density of 490 A/cm2 are achieved with 8 and 32 μm diam BH VCSELs, respectively. Both 8 and 16 μm diam BH VCSELs emit a single TEM00 fundamental mode for current levels many times thresholds. Most single-mode emissions are linearly polarized with a predetermined direction in the [01̄1] crystal orientation.
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