Abstract
We report on 808 nm wavelength lasers grown by solid source molecular beam epitaxy. These tensile strained GaInP-GaInAsP single quantum well lasers exhibited a low threshold current density of 230 A/cm/sup 2/ with a cavity length of 2 mm. A 1 mm long device launched 2 W CW output power with a wallplug efficiency of nearly 50%. The measured lasing characteristics compare favorably to those of 808 nm lasers grown by other growth techniques.
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