Low threshold 1.59 μm vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells

C.H Lin,T.C Wu,F.E Ejeckam,Z.-H Zhua,R Bhat,C.L Chua,Y.H Lo

doi:10.1109/leos.1994.586988

Low threshold 1.59 μm vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells

C.H Lin, T.C Wu + Show 5 more

https://doi.org/10.1109/leos.1994.586988

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Publication Date: Oct 31, 1994

Citations: 1

#Strain-compensated Multiple Quantum Wells #Strain-compensated Multiple Quantum + Show 8 more

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Abstract

We demonstrated, for the first time, long wavelength InGaAs/InGaAsP VCSELs with strain-compensated multiple quantum wells. Record low threshold pumping power and high T/sub o/ have been achieved. The exceedingly high optical gain and the capability of growing many wells relax the stringent requirement on mirror reflectivity making strain-compensated multiple quantum wells attractive for long wavelength VC-SELs.

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