Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates

C.l Chua ,Ya-Ju Lo ,Minghui Hong ,Chyi‐Yeu Lin ,J P Mannáerts ,Z.h Zhu ,R Bhat

doi:10.1109/leos.1994.587002

Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates

C.l Chua , Ya-Ju Lo + Show 5 more

https://doi.org/10.1109/leos.1994.587002

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Publication Date: Oct 31, 1994

Citations: 5

Affiliation: Cornell University, AT&T (United States), Core Competence

#Strain-compensated Multiple Quantum Wells #Strain-compensated Multiple Quantum + Show 8 more

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Abstract

We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.

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