Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

Abstract

We report for the first time on the RF performance of a low-threshold AlGaN/GaN metal–oxide–semiconductor heterostructure field transistor (MOSHFET) with zirconium dioxide as the gate dielectric. Low gate leakage current of 5×10-7 A/mm2 and a threshold voltage which was only 1 V higher than that of an HFET were achieved. The RF power of these devices at 2 GHz was 14.32 W/mm at 50 V drain bias.