Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW

Abstract

Data are presented on InGaAs-AlGaAs strained quantum well lasers with a molecular beam epitaxy (MBE) grown LT-GaAs current-blocking layer on a p-type GaAs substrate. The SCH DQW structure is grown y metalorganic vapor-phase epitaxy (MOVPE) on the channeled LT-GaAs. The CW laser threshold is 50 mA at RT (uncoated) and the maximum output power of 120 mW is obtained (AR-HR coated). Far-field patterns show fundamental lateral and ransverse modes even at the output power at 100 mW. Full widths at half-maximum of far-field patterns parallel and perpendicular to the junction plane are 14.5° and 39.5° at 100 mW, respectively.