Abstract
We report on device results from channel guide InGaAs-GaAs strained quantum well lasers with InGaP cladding layers. Channel guide lasers are demonstrated with the current blocking scheme using a p-n-p InGaP junction on p+-GaAs substrate. The laser structure is grown by metalorganic vapor-phase epitaxy (MOVPE) on the channeled n-InGaP layer. The uncoated lasers show CW laser threshold of 11 mA at RT, output power over 125 mW, fundamental lateral and transverse modes, and lasing wavelength of 0.98 µ m at 50 mW. Anti-reflectivity-high-reflectivity (AR-HR) coated lasers show high output powers of 302 mW.
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