Low temperature synthesis of silicon carbide nanowires on cathode for thermionic energy converter

Abstract

Surface nanostructuring on cathode of thermionic energy converter (TEC) has been researched aggressively throughout recent decades. In this paper, we report a simple approach of low temperature synthesis (600 °C) of silicon carbide nanowires (SiCNWs) by liquid phase source chemical vapor deposition (CVD). These as-synthesized nanowires grown on silicon substrate are utilized as cathode or emitter in the application of thermionic energy converter (TEC) system. The thickness of catalyst (magnesium) coated on silicon substrate should be at least 100 nm for the growth of SiCNWs. By controlling the thickness of catalyst, different size (diameter) of nanowires were obtained.