Abstract
We have studied the growth of ultrathin Ag films on Si(111)7 × 7 between 80–100 K with low temperature scanning tunneling microscopy. Upon completion of the first monolayer, 2D-layer-like growth is observed. Annealing of these Ag films produces atomically flat films with only few bulk defects like partial dislocations, stacking faults and twinning. These defects act as heterogeneous nucleation sites in the low temperature growth of additional Ag.
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