Abstract

This letter reports the low-temperature solution-based fabrication of indium oxide (In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point.

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