Abstract
High densities of self-catalyzed Si nanowires have been grown at temperatures down to320 °C on different Si substrates, whose surfaces have been roughened by simple physicalor chemical treatments. The particular substrates are Si(110) cleavage planes,chemically etched Si(111) surfaces and microcrystalline Si obtained by laser annealingthin amorphous Si layers. The NW morphology depends on the growth surface.Transmission electron microscopy indicates that the NWs are made of pure Si with acrystalline core structure. Reflectivity measurements confirm this latter finding.
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