Low Temperature Pyrolytic Deposition of High Quality SiO2

Abstract

A pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100°–330°C is reported. Deposition is achieved by reacting silane and oxygen in the 2–12 torr pressure range, yielding deposition rates of 140 Å/min at 300°C and 50 Å/min at 120°C. Measurements of refractive index (1.45–1.46), field strength , and resistivity (1013–1016 Ω‐cm) indicate that the oxides are near‐stoichiometric . Fixed oxide charge densities are as low as on <111> silicon. This technology appears promising for Group IV and Group III–V device applications.