Abstract
Growth schemes of ruthenium layers are suggested. The interrelation of growth regularities, structure, and properties of ruthenium layers grown in a temperature range of 110–350°C during the pulsed vaporphase deposition with the participation of a complex carbonyl-diene precursor Ru(CO)3(C6H8), as well as NH3, N2O, and H2 as the second reagent is considered.
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