Abstract
Low-temperature-processed (LTP) Polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated with a poly-Si film crystallized by a new two-step crystallization (NTSC) technique were investigated. The NTSC is characterized by the combination of excimer-laser-induced formation of nucleation centers and short-time low- temperature furnace annealing to create clear crystalline grains with very few in-grain defects. The LTP poly-Si TFTs fabricated with a NTSC poly-Si film not only exhibit better performance but also significantly shorten the crystallization time (about 6 h at 600°C) as compared to those fabricated using conventional solid phase crystallization (about 20 h or longer at 600°C).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
