Low temperature preparation p-CuI/n-ZnO wide gap heterojunction diode

Abstract

Wide gap diode structures are attractive for various applications including tandem solar cells, light emission devices, UV detectors, and display technology. p-CuI/n-ZnO wide gap heterojunction diode have been prepared at a low cost by chemical method. The prepared hexagonal ZnO and γ-CuI films are polycrystalline nature and observed preferential orientation along the (002) and (111) axis aligning with the growth direction, respectively. The heterojunction shows a good rectifying behavior with a IF/IR ∼600 at 3V. The turn on voltage (2.05eV) from I–V characteristic is agree with the built-in potential (2.1eV) from C–V characteristic. The current transport mechanism is dominated by the recombination tunneling at low forward bias voltages and by the space-charge limited current (SCLC) conduction at higher forward bias voltages. This heterojunction diode can be good used for light emission devices and UV detectors.