Abstract
We investigated the low temperature (T<2 K) photoluminescence (LTPL) emission of 6H–SiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1700 °C, we detected new LTPL emission at 4205 Å. After implantation of hydrogen into the boron-implanted and annealed sample, another LTPL emission at 4183 Å appeared. We interpret two additional peaks as vibrational modes of the 4183 Å emission with energies of 86 and 118 meV.
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