Hydrogen-, boron-, and hydrogen-boron-related low temperature photoluminescence of 6H-SiC

Abstract

An investigation of the low temperature (T<2 K) photoluminescence (LTPL) of boron-, hydrogen-, and boron together with hydrogen-doped SiC was done. We used n-type samples of the polytype 6H. After the implantation of boron and annealing at 1700°C, we detected three new LTPL emission lines close to a wavelength of 4205 Å. After the implantation of hydrogen into the boron-implanted samples, we detected another single line at 4183 Å, while the lines at 4205 Å disappeared. In samples with a higher dose of boron, phonon replica of the 4183 Å emission line were detected and two vibrational modes affiliated to the defect were identified (86 and 118 meV). The investigation of boron-doped CVD layers revealed intense hydrogen correlated LTPL emission.