Abstract
In this paper we offer low temperature technology receiving GaAs oxide. For this purpose, we use plasma anodizing with ultraviolet irradiation. Formation native oxide of GaAs is a problem and solving this problem is a scientific challenge. This paper provides the information about the kinetic of growing GaAs oxide, measurement of C-V characteristic, analysis of XPS spectra and Auger Spectroscopy, the distribution profiles of oxygen, Gallium and Arsenide in the total oxide, surface roughness and state density dependence on the anodizing current.
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