Yttrium-induced segregation, disorder and oxidation of the GaAs(110) surface

Abstract

Yttrium deposition onto GaAs(110) and the oxidation of the Y-exposed GaAs(110) surface have been investigated as a function of both Y and O 2 exposures by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At low Y deposition ( < 0.5 ML), significant enhancement of surface disorder was observed at the GaAs(110) surface. Surface segregation of As, induced by Y exposures > 0.5 ML, was detected by the AES. The oxidation rates of Ga and As in the Y-exposed GaAs(110) surface were enhanced dramatically in proportion to the Y exposure.