Abstract
To fabricate quasi-planar optoelectronic integrated circuits (OEICs), a new open tube Zn diffusion method has been developed. The characteristics of Zn diffusion in InP/InGaAs(P) heterostructure materials at comparatively low temperature have been studied, and it has been found for the first time that Zn diffusion rate is proportional to the square of phosphorus content of the InGaAsP materials.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
