Abstract
Transition metal nitride films have been formed by low temperature (400 °C) nitridation with hydrazine. The process uses low temperature cracking of hydrazine to form nitrogen radicals that react with the substrates to form nitride films. Auger electron spectroscopy and X-ray photoelectron spectroscopy were used for chemical analysis of the films. The results show that nitride films with an oxide impurity were made with Co, Cr, Fe, Mo, Si, Ta, Ti, V, and W. The most likely sources of oxygen contamination were incomplete oxide removal during pre-cleaning, water impurities in the hydrazine, and oxygen and water contamination of the films after completion of the nitridation process. Experiments with oxidized tantalum, iron, aluminum, and silicon show the effects of oxides on the hydrazine nitridation reaction. Preliminary electrochemical corrosion tests demonstrate the corrosion protection of iron provided by the iron nitride film.
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