Abstract
By optical detection of excited sputtered particles, depth analysis of a multilayer film on a Si substrate was carried out and low-temperature migration of Si was studied. For complementary information, Rutherford backscattering analysis of all samples was performed. A comparison between the two methods shows that the optical method is well suited for Si migration studies. As a result, it was found that Si penetrated through a 100-Å-thick Cr film into the top metal layers of Pt and Au after heat treatment in the temperature range 350–400 °C. It was also found that a 400-Å Cr film acted as an effective barrier for Si migration under similar conditions.
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