Abstract
A simple method was presented to conduct the low-temperature metal induced crystallization of an amorphous silicon (a-Si) film using nano-sized nickel particles. The effects of the annealing temperature and the duration on the morphology and the crystallized size of the induced polycrystalline silicon (poly-Si) film were investigated using a field emission scanning electron microscope (FE-SEM), a twin thin-film X-ray diffractometer (XRD), a Raman spectrometer, and an energy dispersive spectrum (EDS). In addition, the residual nickel and the I-V characteristics of the poly-Si film were measured using a secondary ion mass spectrometer and a semiconductor parameter analyzer, respectively. The crystalline peak of Si (311) was obviously detected even at an annealing temperature of 400°C and the duration of 1 h. The crystallization temperature was lowered due to the high activity of the nano-nickel particles. Therefore, this study supports the feasibility of applying nano-nickel particles to crystallize the a-Si film.
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