Abstract
The results of studies of magnetoresistance for GaAs filamentous crystals doped with tellurium admixture to a concentration of 2·1017 сm−3, in the temperature range 4.2–60 K and in the magnetic field ranges 0–14 T are presented. The GaAs filamentary crystal magnetoresistance has shown a sharp positive jump at a low magnetic field (up to 0.2 T) at a temperature near 4.2 K, while at higher magnetic field inductions linear behavior of magnetoresistance occurs. The low field magnetoresistance is discussed in the framework of weak localization of charge carriers due to their spin-orbit exchange interaction. The high-field linear magnetoresistance is connected with electron-electron interaction.
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