Abstract
High quality polycrystalline Si films deposited on polyethylene terephthalate (PET) substrates without incubation layers have been achieved with high growth rate (40 nm/min) using plasma-enhanced chemical vapor deposition (PECVD) operated at near atmospheric pressures. A short-pulse based power system was employed to maintain a stable discharge H 2-diluted SiH 4 in the near atmospheric pressures without the use of any inert gases such as He. Highly crystallized features were observed using Raman scattering spectroscopy and X-ray diffraction (XRD). Observations by cross-sectional transmission electron microscopy (X-TEM) suggested that the Si polycrystallites were generated directly on the PET substrates without forming the incubation layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
