Abstract
Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8–22 μm pitch photodetectors have low (<1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs.
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