Abstract
Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equivalent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations were observed at low temperatures under As/Ga ratios far from the stoichiometric condition.
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