Low Temperature Formation of Silicon Oxide Thin Film and Modification of Film Quality by Argon Excimer Light

Abstract

Silicon oxide thin film was formed using reaction of spin-coated dimethyl-silicone-oil and 5% ozone gas at low temperature of 300°C. Silicone oil is used for lubrication, insulation, and so on, and it is inexpensive and easy to deal with owing to its stability. FT-IR spectrum of the formed silicon oxide film was similar to that of the thermally oxidized film, and we hardly observed peaks of Si-CH3 and C-H bonds originated in silicone oil. The Si-OH bonds in the film were observed. The Si-OH bond causes the degradation of the electric properties of the insulator. In order to remove the Si-OH bonds, the silicon oxide film was treated with an argon excimer light at room temperature. The wavelength of the light was 126 nm. The amount of Si-OH bond was drastically reduced by the UV annealing. The energy of the UV light is high and the value is 9.8 eV. The high energy light may cut the bond of Si-OH. Therefore, the amount of Si-OH bond could be reduced.