Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity

Abstract

We have investigated the Au catalyst crystallinity modulation effect of solid phase crystallization for amorphous Ge / Au / SiO2 stacked structure. Without using Au crystallinity modulation, the preferentially (111) oriented crystalline Ge was formed after annealing at 200 °C, however, Au atoms were highly included (~50 %) in the crystallized Ge. On the other hand, when Au crystallinity modulation by post Au-evaporation annealing utilized, the Au atom diffusion into Ge was significantly suppressed (<1%). We have confirmed that low temperature formation of the preferentially (111) oriented crystalline Ge without Au contamination by improving Au catalyst crystallinity.