Abstract
We have investigated the method of forming a high-quality CaF 2 film onto a GaAs(100) surface. We used X-ray diffractometry and Rutherford backscattering spectrometry to characterize the film quality. We demonstrate that pretreatment of GaAs wafer surfaces by (NH 4) 2S x solution leads to the epitaxial growth of CaF 2 on the GaAs(100) surface at a substrate temperature of around 200°C. We suggest that both oxide removal by (NH 4) 2S x etching and sulfur passivation of the surface are crucial to the low-temperature epitaxial growth of CaF 2. At a substrate temperature of 300°C, the epitaxy quality of CaF 2 is deteriorated.
Published Version
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