Abstract
Low-energy DC-plasma-enhanced chemical vapor deposition (LEPECVD) is a novel technique for low-temperature epitaxial growth. A DC voltage arc discharge operated at a current I arc=20–70 A is responsible for the dissociation of the reactive gases SiH 4 and GeH 4, and a very efficient hydrogen removal from the surface. The resulting growth rates at which epitaxial growth can be achieved are in the nm/s range for substrate temperatures substantially below 600°C. SiGe superlattices and step-graded buffers are examples of structures we have realized by LEPECVD.
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