Abstract
We study low temperature electron mobility μnin a GaAs/Alx Ga 1−xAs coupled double quantum well structure. Both the extreme barriers are δ -doped with Si so that the electrons diffuse into the adjacent wells forming two sheets of two-dimensional electron gas (2DEG) separated by a thin central barrier. The subband electron wavefunctions and energy levels are numerically obtained as a function of the well width, barrier width and doping concentration. The screening of ionized impurity potential by the 2D-electrons is obtained in terms of the static dielectric response function within the random phase approximation (RPA). μnis calculated by solving the coupled Boltzmann equation in the relaxation time approximation. The coupling of wavefunctions through the barrier, screening of ionized impurities and intersubband scattering effects on μnare investigated.
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